Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

Lyu Zhijun¹, Lu Hongliang^{1, †}, Zhang Yuming¹, Zhang Yimen¹, Lu Bin², Zhu Yi¹, Meng Fankang¹, Sun Jiale¹

(a) Transfer characteristics of the In_mGa_{1 − m}As/GaAs VGS-TFET with different channel thickness T_CH at V_D = −0.3 V and (inset) leakage current I_OFF of the VGS-TFET versus T_CH. (b) SS of the VGS-TFET versus drain current with different T_CH.