Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source
Lyu Zhijun1, Lu Hongliang1, †, Zhang Yuming1, Zhang Yimen1, Lu Bin2, Zhu Yi1, Meng Fankang1, Sun Jiale1
       

The simulated transfer characteristics of the InAs/GaAs hetero-junction TFET for VD = −0.3 V (red line) and the components of total drain current. In region I, the currents of band-to-band tunneling and SRH recombination are very small and the p–n junction inverse drifting current plays a dominant role in ID. In region II, the drain current mainly consists of the SRH recombination current. In region III, the band-to-band tunneling current increases sharply to become the main part of ID.