Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

Lyu Zhijun¹, Lu Hongliang^{1, †}, Zhang Yuming¹, Zhang Yimen¹, Lu Bin², Zhu Yi¹, Meng Fankang¹, Sun Jiale¹

(a) Transfer characteristics of the In_mGa_{1 − m}As/GaAs VGS-TFET in comparison with the GaAs conventional TFET, InAs homo-junction TFET and InAs/GaAs hetero-junction TFET for V_D = −0.3 V. (b) SS of the VGS-TFET as a function of drain current compared with the conventional TFET.