Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

Lyu Zhijun¹, Lu Hongliang^{1, †}, Zhang Yuming¹, Zhang Yimen¹, Lu Bin², Zhu Yi¹, Meng Fankang¹, Sun Jiale¹

Band diagrams of the tunnel junction for VGS-TFET, GaAs-TFET and InAs-TFET, respectively, (a) at the off state along the cutline A–A′ (at the distance of 1 nm below the channel surface) and (b) at the on state along the cutline B–B′ (at the distance of 1 nm above the channel bottom).