Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source
Lyu Zhijun1, Lu Hongliang1, †, Zhang Yuming1, Zhang Yimen1, Lu Bin2, Zhu Yi1, Meng Fankang1, Sun Jiale1
       

Calibrations of the nonlocal tunneling model for the InGaAs TFET. LG is set as 100 nm in the simulation because the gate length scaling has a very weak impact on device characteristics.[30]