Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

Lyu Zhijun¹, Lu Hongliang^{1, †}, Zhang Yuming¹, Zhang Yimen¹, Lu Bin², Zhu Yi¹, Meng Fankang¹, Sun Jiale¹

Source bandgap variations and cross-sectional schematics of (a) the studied VGS-TFET and (b) the GaAs conventional TFET.