Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Xu Qing-Jun^{1, 2}, Zhang Shi-Ying^{1, 2}, Liu Bin^{1, ‡}, Li Zhen-Hua^{1, 2}, Tao Tao¹, Xie Zi-Li^{1, §}, Xiu Xiang-Qian¹, Chen Dun-Jun¹, Chen Peng¹, Han Ping¹, Wang Ke¹, Zhang Rong¹, Zheng You-Liao¹

Temperature-dependent (a) resistivity, (b) hole concentration, and (c) mobility of Mg-doped Al_xGa_{1 − x}N (x = 0.23 and 0.35). Solid lines are obtained from Arrhenius plots in high-temperature region.