High performance InAlN/GaN high electron mobility transistors for low voltage applications
(a) Large signal characteristics of the InAlN/GaN HEMT at 8 GHz. (b) Output power and power added efficiency versus drain voltage at 8 GHz.
High performance InAlN/GaN high electron mobility transistors for low voltage applications |
(a) Large signal characteristics of the InAlN/GaN HEMT at 8 GHz. (b) Output power and power added efficiency versus drain voltage at 8 GHz. |
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