High performance InAlN/GaN high electron mobility transistors for low voltage applications
Mi Minhan
1, †
, Zhang Meng
1, ‡
, Wu Sheng
1
, Yang Ling
2
, Hou Bin
1
, Zhou Yuwei
2
, Guo Lixin
3
, Ma Xiaohua
1
, Hao Yue
1
Small-signal characteristics of InAlN/GaN HEMT.