High performance InAlN/GaN high electron mobility transistors for low voltage applications
Mi Minhan1, †, Zhang Meng1, ‡, Wu Sheng1, Yang Ling2, Hou Bin1, Zhou Yuwei2, Guo Lixin3, Ma Xiaohua1, Hao Yue1
       

Small-signal characteristics of InAlN/GaN HEMT.