High performance InAlN/GaN high electron mobility transistors for low voltage applications
Mi Minhan1, †, Zhang Meng1, ‡, Wu Sheng1, Yang Ling2, Hou Bin1, Zhou Yuwei2, Guo Lixin3, Ma Xiaohua1, Hao Yue1
       

(a) Pulsed I–V characteristics of InAlN/GaN HEMT. (b) Off-state breakdown characteristics of InAlN/GaN HEMT.