High performance InAlN/GaN high electron mobility transistors for low voltage applications
Mi Minhan1, †, Zhang Meng1, ‡, Wu Sheng1, Yang Ling2, Hou Bin1, Zhou Yuwei2, Guo Lixin3, Ma Xiaohua1, Hao Yue1
       

(a) Output characteristics of the InAlN/GaN HEMT. (b) Schottky characteristics of the InAlN/GaN HEMT.