High performance InAlN/GaN high electron mobility transistors for low voltage applications

Mi Minhan^{1, †}, Zhang Meng^{1, ‡}, Wu Sheng¹, Yang Ling², Hou Bin¹, Zhou Yuwei², Guo Lixin³, Ma Xiaohua¹, Hao Yue¹

(a) Cross section of the InAlN/GaN HEMT. (b) SEM graph of the fabricated InAlN/GaN in the top view.