Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure
Qi Lu-Wei1, 2, 3, Liu Xiao-Yu2, Meng Jin1, Zhang De-Hai1, Zhou Jing-Tao2, †
       

The equivalent circuit of (a) diode-open, (b) diode-short, and (c) pin-open structure.