Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure
Qi Lu-Wei1, 2, 3, Liu Xiao-Yu2, Meng Jin1, Zhang De-Hai1, Zhou Jing-Tao2, †
       

Scanning electron microscope (SEM) photographs of (a) the fabricated GaAs SBVs, (b) Schottky metal–brim structure details.