Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure

Qi Lu-Wei^{1, 2, 3}, Liu Xiao-Yu², Meng Jin¹, Zhang De-Hai¹, Zhou Jing-Tao^{2, †}

Depletion layer area (white line) and electric field distribution near the edge of the anode metal of (a) normal-SBV, (b) SMB-SBV, (c) cross-section of the electric field distribution.