Growth and structural characteristics of metastable β-In2Se3 thin films on H-terminated Si(111) substrates by molecular beam epitaxy
Shen Yi-Fan1, Yin Xi-Bo2, Xu Chao-Fan2, He Jing2, Li Jun-Ye2, Li Han-Dong2, †, Zhu Xiao-Hong1, ‡, Niu Xiao-Bin2
       

STM images of 30-nm-thick In2Se3 thin film with post-annealing and rapid quench, showing (a) surface morphology in a large scale of 300 nm × 300 nm; (b) surface morphology in a medium scale of 70 nm × 70 nm, represented by black square in panel (a); (c) surface morphology with a step in small scaled area 42 nm × 30 nm, represented by the black rectangle in panel (b); (d) step height is characterized to be 0.958 nm after correction.