Growth and structural characteristics of metastable β-In2Se3 thin films on H-terminated Si(111) substrates by molecular beam epitaxy

Growth and structural characteristics of metastable β-In₂Se₃ thin films on H-terminated Si(111) substrates by molecular beam epitaxy

Shen Yi-Fan¹, Yin Xi-Bo², Xu Chao-Fan², He Jing², Li Jun-Ye², Li Han-Dong^{2, †}, Zhu Xiao-Hong^{1, ‡}, Niu Xiao-Bin²

(a) RHEED pattern of ZB-structure; RHEED patterns after the post-annealing, taken along (b) Si[1 2¯ 1] azimuth, (c) Si[ 1¯21¯ ] azimuth, and (d) rotating 30° from Si[ 1¯21¯ ] azimuth; (e) XRD spectra of low temperature grown sample and rapidly quenched sample; (f) Raman spectra of low temperature grown sample and rapidly quenched sample; (g) XRD spectra of slowly and rapidly quenched samples; (h) precise XRD spectra of β (006) diffraction peak for slowly and rapidly quenched samples; (i) Raman spectra of slowly and rapidly quenched samples.