Growth and structural characteristics of metastable β-In2Se3 thin films on H-terminated Si(111) substrates by molecular beam epitaxy
Shen Yi-Fan1, Yin Xi-Bo2, Xu Chao-Fan2, He Jing2, Li Jun-Ye2, Li Han-Dong2, †, Zhu Xiao-Hong1, ‡, Niu Xiao-Bin2
       

(a) RHEED pattern of H-terminated Si(111) surface, taken along Si[ 12¯1 ] azimuth; (b) RHEED pattern of ZB-structure after the film growth, taken along Si[1 2¯1 ] azimuth; (c) RHEED pattern of ZB-structure after the film growth, taken along 30° rotating from Si[1 2¯1 ] azimuth, represented by blue lines; (d) RHEED pattern of growth beginning; (e) RHEED pattern after the film growth; (f) RHEED pattern after film growth taken along 30° rotating from Si[1 2¯1 ] azimuth; (g) XRD; (d) Raman spectra of In2Se3 thin films.