A method of generating random bits by using electronic bipolar memristor

Yang Bin-Bin^{1, 2}, Xu Nuo^{2, †}, Zhou Er-Rui^{1, 2}, Li Zhi-Wei³, Li Cheng^{1, 2}, Yi Pin-Yun^{1, 2}, Fang Liang^{1, 2, ‡}

(a) Plots of resistance cumulative probability versus resistance of HRS and LRS under 20-mV read voltage at 300 K; (b) plots of voltage cumulative probability versus values of V_set and V_reset at 300 K; (c) spread of V_set varying with the resistance of HRS; (d) flowchart of generating random bits by using fabricated memristor; (e) the required operation voltages (the widths of the voltage pulses are the same); (f) random bit-streams obtained in 10-voltage operation cycles.