A method of generating random bits by using electronic bipolar memristor

Yang Bin-Bin^{1, 2}, Xu Nuo^{2, †}, Zhou Er-Rui^{1, 2}, Li Zhi-Wei³, Li Cheng^{1, 2}, Yi Pin-Yun^{1, 2}, Fang Liang^{1, 2, ‡}

(a) Optical microscopic image from top view of Pt/Ti/Ta₂O₅/Pt memristor with inset schematically indicating its structure; (b) I–V curves of Pt/Ti/Ta₂O₅/Pt memristor under voltage sweeping mode at 300 K; (c) resistance in HRS and LRS under the 20-mV read voltage at 300 K, and (d) switching voltages under 150-voltage sweepings.