Dark count in single-photon avalanche diodes: A novel statistical behavioral model
Yu Wen-Juan, Zhang Yu †, Xu Ming-Zhu, Lu Xin-Miao
Schematic diagram of device model for single-photon avalanche diode (SPAD),where w1 and w2 are depth of upper and lower boundary of depletion region, respectively, w3 is depth of lower boundary of the N-well, and w4 is depth of lower boundary of N-iso.