Investigation of active-region doping on InAs/GaSb long wave infrared detectors

Cui Su-Ning^{1, 2}, Jiang Dong-Wei^{1, 2, 4}, Sun Ju^{1, 2}, Jia Qing-Xuan^{1, 2}, Li Nong^{1, 2}, Zhang Xuan^{1, 2}, Li Yong^{1, 3}, Chang Fa-Ran¹, Wang Guo-Wei^{1, 2, 4, ‡}, Xu Ying-Qiang^{1, 2, 4}, Niu Zhi-Chuan^{1, 2, 4, 5, †}

Characterization of optical properties of four groups of devices with π-region doping temperature varying from 760 °C to 820 °C: (a) the absolute responsivity; (b) the QE (%), and (c) the detectivity at 77 K.