Investigation of active-region doping on InAs/GaSb long wave infrared detectors
Cui Su-Ning1, 2, Jiang Dong-Wei1, 2, 4, Sun Ju1, 2, Jia Qing-Xuan1, 2, Li Nong1, 2, Zhang Xuan1, 2, Li Yong1, 3, Chang Fa-Ran1, Wang Guo-Wei1, 2, 4, ‡, Xu Ying-Qiang1, 2, 4, Niu Zhi-Chuan1, 2, 4, 5, †
       

Characterization of optical properties of four groups of devices with π-region doping temperature varying from 760 °C to 820 °C: (a) the absolute responsivity; (b) the QE (%), and (c) the detectivity at 77 K.