Investigation of active-region doping on InAs/GaSb long wave infrared detectors
Cui Su-Ning
1, 2
, Jiang Dong-Wei
1, 2, 4
, Sun Ju
1, 2
, Jia Qing-Xuan
1, 2
, Li Nong
1, 2
, Zhang Xuan
1, 2
, Li Yong
1, 3
, Chang Fa-Ran
1
, Wang Guo-Wei
1, 2, 4, ‡
, Xu Ying-Qiang
1, 2, 4
, Niu Zhi-Chuan
1, 2, 4, 5, †
Behavior of simulated dark current components with doping temperature.