(a) The resistive switching behaviors of the device before and after light gating in the ITO/CeO_2–x/AlO_y/Al optoelectronic memristor.^[18] Copyright (2017) American Chemical Society. (b) The process of optical set in a hybrid Au/PMMA/Ag/MoO₃/P₃HT:PCBM/ZnO/ITO device. Inset: Schematic image of the device.^[27] Copyright (2019) American Chemical Society. (c) The I–V curves of Pt/In-doped TiO₂/Au memristor under the continues illumination with different power density. The inset shows the device structure with optical stressing.^[29] Copyright (2019) Springer Nature. (d) Current evolution process of the ITO/Nb:SrTiO₃ device before and after the light excitation.^[14] Copyright (2019) American Chemical Society.