Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate

Zhao Minglong^{1, 2, 3}, Tang Xiansheng^{1, 2, 3}, Huo Wenxue^{1, 2, 3}, Han Lili^{1, 2, 3}, Deng Zhen^{1, 3, 5}, Jiang Yang^{1, 3}, Wang Wenxin^{1, 3, 4}, Chen Hong^{1, 3, 4}, Du Chunhua^{1, 3, 5}, Jia Haiqiang^{1, 3, 4, †}

(a) The I–V characteristics, (b) transfer characteristics, and (c) gate leakage current as a function of gate voltage for GaN HEMTs on Si and Cu substrates.