Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection
Gao Jiang-Dong, Zhang Jian-Li †, Quan Zhi-Jue, Liu Jun-Lin, Jiang Feng-Yi
       

Comparison between experimental and simulation results by using new ABC-model, showing (a) plots of internal quantum efficiency versus logarithmic current density and (b) plots of radiative recombination rate versus current density, with circles denoting experiment results, and lines referring to modelled results, for varying values of T and A and fixed values of B0, C, k, N*, and ω.