Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection
Gao Jiang-Dong, Zhang Jian-Li, Quan Zhi-Jue, Liu Jun-Lin, Jiang Feng-Yi
       

Dependence of radiative recombination rate on logarithmic carrier concentration (blue line) and lattice temperature (red line), with grey area representing carrier concentration range when radiative recombination rate is mainly influenced by lattice temperature.