Experimental electroluminescence spectra of InGaN-based light-emitting diode with different current densities at different lattice temperatures: (a) 100 K, (b) 150 K, (c) 250 K, (d) 300 K, and (e) 350 K, and (f) dependence of the experimental radiative recombination rate R on lattice temperature at different current densities, where lines 1–11 correspond to current density of 0.8 A⋅cm⁻², 1.5 A⋅cm⁻², 3.1 A⋅cm⁻², 5.7 A⋅cm⁻², 10.3 A⋅cm⁻², 15.4 A⋅cm⁻², 20.6 A⋅cm⁻², 26.7 A⋅cm⁻², 36.0 A⋅cm⁻², 51.4 A⋅cm⁻², and 77.1 A⋅cm⁻², respectively.