Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection
Gao Jiang-Dong, Zhang Jian-Li, Quan Zhi-Jue, Liu Jun-Lin, Jiang Feng-Yi
       

Experimental electroluminescence spectra of InGaN-based light-emitting diode with different current densities at different lattice temperatures: (a) 100 K, (b) 150 K, (c) 250 K, (d) 300 K, and (e) 350 K, and (f) dependence of the experimental radiative recombination rate R on lattice temperature at different current densities, where lines 1–11 correspond to current density of 0.8 A⋅cm−2, 1.5 A⋅cm−2, 3.1 A⋅cm−2, 5.7 A⋅cm−2, 10.3 A⋅cm−2, 15.4 A⋅cm−2, 20.6 A⋅cm−2, 26.7 A⋅cm−2, 36.0 A⋅cm−2, 51.4 A⋅cm−2, and 77.1 A⋅cm−2, respectively.