Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection |
Experimental electroluminescence spectra of InGaN-based light-emitting diode with different current densities at different lattice temperatures: (a) 100 K, (b) 150 K, (c) 250 K, (d) 300 K, and (e) 350 K, and (f) dependence of the experimental radiative recombination rate |