Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands
Tang Zhen-Jie1, †, Li Rong2, Zhang Xi-Wei1
       

(a) Zr and (b) Si composition distribution in the ZrxSi1−xO2 CTL for memory capacitors. Schematic energy band diagrams of memory capacitors in (c) fresh state, (d) program state, and (e) retention state, in which the symbol – and ⋅ represent the traps and electrons in the CTL, respectively.