Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands
Cross-sectional TEM images of the memory capacitors (a) S1, (b) S2, (c) S3, and (d) S4.
Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands |
Cross-sectional TEM images of the memory capacitors (a) S1, (b) S2, (c) S3, and (d) S4. |
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