Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

Wang Wei-Fan^{1, 2}, Wang Jian-Feng^{1, 2, 3, †}, Zhang Yu-Min^{2, 3}, Li Teng-Kun^{1, 2}, Xiong Rui², Xu Ke^{1, 2, 3, ‡}

(a) Reverse I–V characteristics of the diodes with and without the BIT. (b) Simulated electric field distributions in the diodes without the BIT (left) and with the BIT (right) at −600 V.