Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination
Wang Wei-Fan1, 2, Wang Jian-Feng1, 2, 3, †, Zhang Yu-Min2, 3, Li Teng-Kun1, 2, Xiong Rui2, Xu Ke1, 2, 3, ‡
(a) Forward characteristics of the diodes with and without the BIT. Inset: ln(J) as a function of V. (b) The I–V characteristics of the diodes with and without the BIT.