Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

Wang Wei-Fan^{1, 2}, Wang Jian-Feng^{1, 2, 3, †}, Zhang Yu-Min^{2, 3}, Li Teng-Kun^{1, 2}, Xiong Rui², Xu Ke^{1, 2, 3, ‡}

(a) The C–V characteristic of the device drift layer. (b) The extracted free carrier concentration in the device drift layer.