Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

Wang Wei-Fan^{1, 2}, Wang Jian-Feng^{1, 2, 3, †}, Zhang Yu-Min^{2, 3}, Li Teng-Kun^{1, 2}, Xiong Rui², Xu Ke^{1, 2, 3, ‡}

(a) The distribution of boron ions in 1-μm thick SiO₂ at 40 keV and 140 keV implantation energy simulated by SRIM. (b) The distribution of boron ions in GaN simulated by SRIM at 40 keV and 140 keV implantation energy and measured by SIMS.