Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination
(a) The concentration of C, H, O, and Si in GaN-on-GaN MOCVD growths by SIMS. (b) The AFM image of the epilayer in a range of 10 μm × 10 μm.
Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination |
(a) The concentration of C, H, O, and Si in GaN-on-GaN MOCVD growths by SIMS. (b) The AFM image of the epilayer in a range of 10 μm × 10 μm. |
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