Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

Wang Wei-Fan^{1, 2}, Wang Jian-Feng^{1, 2, 3, †}, Zhang Yu-Min^{2, 3}, Li Teng-Kun^{1, 2}, Xiong Rui², Xu Ke^{1, 2, 3, ‡}

(a) The schematic structures of the vertical GaN-on-GaN SBDs with and without the BIT. (b) Rocking curves of the (002) and (102) planes of the GaN epilayer. (c) The plane-section CL image.