Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs
Zhu Qing1, 2, Ma Xiao-Hua2, †, Chen Yi-Lin1, 2, Hou Bin2, Zhu Jie-Jie1, 2, Zhang Meng2, Wu Mei2, Yang Ling1, 2, Hao Yue2
       

Plot of variation of Vth with time, induced by zener traps and interface states in negative stress and recovery process.