Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

Zhu Qing^{1, 2}, Ma Xiao-Hua^{2, †}, Chen Yi-Lin^{1, 2}, Hou Bin², Zhu Jie-Jie^{1, 2}, Zhang Meng², Wu Mei², Yang Ling^{1, 2}, Hao Yue²

Plots of ΔV_th versus stress time and recovery time under stress voltage of (a) −15 V and (b) −,25 V. Plots of normalized G_m,max versus stress time and recovery time under stress voltage of (c) −15 V and (d) −25 V.