Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs
Zhu Qing
1, 2
, Ma Xiao-Hua
2, †
, Chen Yi-Lin
1, 2
, Hou Bin
2
, Zhu Jie-Jie
1, 2
, Zhang Meng
2
, Wu Mei
2
, Yang Ling
1, 2
, Hao Yue
2
Drift of
V
th
versus
sampling time with and without negative biased stress.
