Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

Zhu Qing^{1, 2}, Ma Xiao-Hua^{2, †}, Chen Yi-Lin^{1, 2}, Hou Bin², Zhu Jie-Jie^{1, 2}, Zhang Meng², Wu Mei², Yang Ling^{1, 2}, Hao Yue²

(a) Transfer characteristics measured in 2000 s without any stress, and (b) the variations of threshold voltage with time during the experiments in panel (a).