Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

Zhu Qing^{1, 2}, Ma Xiao-Hua^{2, †}, Chen Yi-Lin^{1, 2}, Hou Bin², Zhu Jie-Jie^{1, 2}, Zhang Meng², Wu Mei², Yang Ling^{1, 2}, Hao Yue²

(a) The I_gs–V_gs characteristics of MIS-HEMTs with inset showing schematic cross section view of MIS-HEMT. (b) Transfer and transconductance characteristics at V_ds = 10 V. (c) Schematic diagram of experimental procedure.