<italic>In-situ</italic> SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

Mi Min-Han^{1, †}, Wu Sheng¹, Yang Ling², He Yun-Long¹, Hou Bin¹, Zhang Meng¹, Guo Li-Xin³, Ma Xiao-Hua¹, Hao Yue¹

(a) Pulsed I–V characteristics of SiN recessing HEMT, and (b) plots of channel effective mobility versus N_sh of in-situ SiN and SiN recessing HEMTs.