<italic>In-situ</italic> SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

Mi Min-Han^{1, †}, Wu Sheng¹, Yang Ling², He Yun-Long¹, Hou Bin¹, Zhang Meng¹, Guo Li-Xin³, Ma Xiao-Hua¹, Hao Yue¹

(a) Transfer characteristics of in-situ SiN and SiN recessing HEMTs, (b) threshold voltage and maximum drain current as a function of etch time, and (c) Schottky characteristics of SiN recessing HEMT and previously reported HEMT with recessed gate of d_AlGaN = 6 nm.^[16]