<italic>In-situ</italic> SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

Mi Min-Han^{1, †}, Wu Sheng¹, Yang Ling², He Yun-Long¹, Hou Bin¹, Zhang Meng¹, Guo Li-Xin³, Ma Xiao-Hua¹, Hao Yue¹

(a) The C–V characteristics of in-situ SiN capacitor and SiN recessing capacitor, (b) depth profiles of carrier concentration of two kinds of capacitors, and (c) C–V characteristics of SiN recessing capacitor measured at different frequencies.