In-situ
SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT
Mi Min-Han
1, †
, Wu Sheng
1
, Yang Ling
2
, He Yun-Long
1
, Hou Bin
1
, Zhang Meng
1
, Guo Li-Xin
3
, Ma Xiao-Hua
1
, Hao Yue
1
The 5 μm × 5 μm surface morphology of (a) the
in-situ
SiN sample and (b) after SiN recessing sample.
