Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates
He Yi-Ni, Deng Lian-Wen, Qin Ting, Liao Cong-Wei, Luo Heng, Huang Sheng-Xiang
       

Comparison results between SG and IDG InGaZnO TFTs using Verilog-A model, with inset schematically showing inverter circuit with IDG InGaZnO TFTs.