Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates
He Yi-Ni, Deng Lian-Wen †, Qin Ting, Liao Cong-Wei, Luo Heng, Huang Sheng-Xiang
       

Comparison between calculated and simulated output characteristics of IDG a-InGaZnO TFT with VGT = −5 V for various values of VGS.