Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates
He Yi-Ni, Deng Lian-Wen †, Qin Ting, Liao Cong-Wei, Luo Heng, Huang Sheng-Xiang
       

Comparison between simulated and calculated transfer characteristics of IDG a-InGaZnO TFT for three different values of VGT.