Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates

He Yi-Ni, Deng Lian-Wen^†, Qin Ting, Liao Cong-Wei, Luo Heng, Huang Sheng-Xiang

Plots of surface potential φ_S and top potential φ_T versus channel voltage for IDG InGaZnO TFT, with colored area referring to integration region.