Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates
He Yi-Ni
, Deng Lian-Wen
†
, Qin Ting
, Liao Cong-Wei
, Luo Heng
, Huang Sheng-Xiang
The cross sectional view of independent biased dual-gate InGaZnO TFTs.